Backside illuminated sensor processing

ABSTRACT

The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer is formed to have a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of U.S. application Ser. No.12/830,719, filed Jul. 6, 2010, which claimed priority to U.S.provisional application No. 61/353,951, filed Jun. 11, 2010, the entiredisclosures of which are incorporated herein by reference in theirentirety.

BACKGROUND

In semiconductor technologies, backside illuminated (BSI) sensors areused for sensing a volume of exposed light projected towards thebackside surface of a substrate or sensor layer. The backsideilluminated sensors can be formed in the substrate and light projectedtowards the backside of the substrate can reach the sensors. However,during BSI sensor processing, stress on the substrate or sensor layer isknown to impact leakage current or dark current. In particular, stresson the device substrate or sensor layer may be caused by subsequentcolor filter processing and/or device packaging after leaving afabrication facility, which can cause variations in dark current andthus negatively impact device performance or even possibly cause devicedegradation.

Therefore, while existing methods of fabricating semiconductor deviceshave been generally adequate for their intended purposes, they have notbeen entirely satisfactory in every aspect. In particular, improvementsin backside illuminated sensor processing and/or the correspondingsensor substrate are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that various features may not be drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart illustrating a method of fabricating asemiconductor device according to various aspects of the presentdisclosure.

FIGS. 2A-2F illustrate cross-sectional views of intermediate stages inthe manufacture of a backside illuminated sensor device in accordancewith the method of FIG. 1.

FIGS. 3A-3B illustrate a sectional view and a top view, respectively, ofone embodiment of a semiconductor device having a plurality of backsideilluminated sensors and a compressively-stressed dielectric layerconstructed according to aspects of the present disclosure.

DETAILED DESCRIPTION

The present disclosure relates generally to the fabrication of asemiconductor device, and more particularly, to methods for providingsensor isolation features in a semiconductor substrate and devicesfabricated by such methods.

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of variousembodiments. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Forexample, the formation of a first feature “over” or “on” a secondfeature in the description that follows may include embodiments in whichthe first and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formed betweenthe first and second features, such that the first and second featuresmay not be in direct contact. In addition, the present disclosure mayrepeat or use similar reference numerals and/or letters in the variousexamples. This repetition is for the purpose of simplicity and clarityand does not in itself dictate a relationship between the variousembodiments and/or configurations discussed.

Referring now to the figures, FIG. 1 illustrates a flowchart of anexample method for fabricating a semiconductor device including acompressively-stressed dielectric layer that induces a tensile stress ina sensor layer substrate. FIGS. 2A-2F illustrate cross-sectional viewsof intermediate stages in the manufacture of a backside illuminatedsensor device in accordance with the method of FIG. 1. FIGS. 3A-3Billustrate a sectional view and a top view, respectively, of oneembodiment of a semiconductor device having a plurality of backsideilluminated sensors and a compressively-stressed dielectric layerconstructed according to aspects of the present disclosure.

The semiconductor device may include an integrated circuit (IC) chip,system on chip (SoC), or portion thereof, that may include variouspassive and active microelectronic devices, such as resistors,capacitors, inductors, diodes, metal-oxide-semiconductor field effecttransistors (MOSFET), complementary MOS (CMOS) transistors, bipolarjunction transistors (BJT), laterally diffused MOS (LDMOS) transistors,high power MOS transistors, FinFET transistors, or other types oftransistors. It is understood that the figures may have been simplifiedfor a better understanding of the inventive concepts of the presentdisclosure. Accordingly, it should be noted that additional processesmay be provided before, during, and/or after the method of FIG. 1, andthat some other processes may only be briefly described herein.

Referring now to FIG. 1, a method 100 begins with block 102 in which asubstrate having a frontside surface and a backside surface is provided,for example a sensor layer in which is formed sensor elements, such asphotodetectors. The method 100 continues with block 104, in which aplurality of sensor elements are formed in the substrate. Then, adielectric layer is formed on the backside surface of the substrate, asshown in block 106. The dielectric layer has a compressive stress toinduce a tensile stress in the substrate, which advantageously reducesdark current in the device which may be caused by subsequent processingon the device after the dielectric layer is formed. At block 108, thedielectric layer is etched or thinned, and then color filters, lenses,and/or other chip packaging is formed on the etched dielectric layer, asshown in block 110.

Referring now to FIGS. 2A-2F, cross-sectional views of intermediatestages in the manufacture of a backside illuminated (BSI) sensor device200 is illustrated in accordance with the method of FIG. 1. FIG. 2Aillustrates a sectional view of a carrier wafer 202 being bonded by abonding process 211 to BSI sensor device 200, which includes a substrate210, a multilayer interconnect (MLI) 230, and an interlayer dielectric(inter-level dielectric or ILD) 240 to isolate the MLI 230 disposedtherein.

Semiconductor substrate 210 may also be considered a sensor layer. Thesubstrate 210 includes silicon. The substrate 210 may alternatively oradditionally include other elementary semiconductor material such asgermanium, and/or diamond. The substrate 210 may also include a compoundsemiconductor material such as silicon carbide, gallium arsenic, indiumarsenide, and/or indium phosphide. The substrate 210 may include analloy semiconductor such as silicon germanium, silicon germaniumcarbide, gallium arsenic phosphide, and/or gallium indium phosphide. Thesubstrate 210 may include various p-type doped regions and/or n-typedoped regions. All doping may be implemented using a process such as ionimplantation or diffusion in various steps and techniques. The substrate210 may include conventional isolation features (e.g., shallow trenchisolation or LOCOS features), known in the art, to separate differentdevices formed in the substrate 210. The substrate 210 may include otherfeatures such as an epitaxial layer, a semiconductor on insulator (SOI)structure, or combinations thereof.

The semiconductor device 200 further includes MLI 230 couplable tosensor elements which are operable to properly respond to illuminatedlight (imaging radiation). The MLI 230 may be formed on thesemiconductor substrate 210 and disposed on the frontside surface of thesubstrate. The MLI 230 may include conductive materials, such as metals.In one example, metals such as aluminum, aluminum/silicon/copper alloy,titanium, titanium nitride, tungsten, polysilicon, metal silicide, orcombinations thereof, may be used and are referred to as aluminuminterconnects. Aluminum interconnects may be formed by a processincluding physical vapor deposition (or sputtering), chemical vapordeposition (CVD), or combinations thereof. Other manufacturingtechniques to form the metal interconnect may include photolithographyprocessing and etching to pattern the conductive materials for vertical(via and contact) and horizontal connects (conductive line). Still othermanufacturing processes such as thermal annealing may be used to formmetal silicide. The metal silicide used in multilayer interconnects mayinclude nickel silicide, cobalt silicide, tungsten silicide, tantalumsilicide, titanium silicide, platinum silicide, erbium silicide,palladium silicide, or combinations thereof. Alternatively, coppermultilayer interconnect may be used and include copper, copper alloy,titanium, titanium nitride, tantalum, tantalum nitride, tungsten,polysilicon, metal silicide, or combinations thereof. The coppermultilayer interconnect may be formed by a technique including CVD,sputtering, plating, or other suitable processes.

The semiconductor device 200 further includes ILD 240 to isolate the MLI230 disposed therein. The ILD structure 240 may include silicon dioxide,silicon nitride, silicon oxynitride, polyimide, spin-on glass (SOG),fluoride-doped silicate glass (FSG), carbon doped silicon oxide, BlackDiamond® (Applied Materials of Santa Clara, Calif.), Xerogel, Aerogel,amorphous fluorinated carbon, Parylene, BCB (bis-benzocyclobutenes),SiLK (Dow Chemical, Midland, Mich.), polyimide, and/or other suitablematerials. The ILD 240 may be formed by a technique including spin-on,CVD, sputtering, or other suitable processes. The MLI 230 and ILD 240may be formed in an integrated process including a damascene processsuch as dual damascene processing or single damascene processing.

The bonding process 211 may include typical bonding processes foroperably coupling the carrier wafer 202 to device 200, and in particularto MLI 230 and ILD 240.

Referring now to FIG. 2B, device 200 undergoes an etch or thin downprocess 213 to thin the substrate 210 such that light directed throughthe back surface thereof may effectively reach sensor elements 220formed within the substrate.

Referring now to FIG. 2C, sensor elements are formed within substrate210 by a dopant implantation and anneal process 215. In one example, thedopant may include boron and/or other ions, and the anneal may beaccomplished by using a laser. The sensor elements (or sensor pixels)formed within the semiconductor substrate may each include alight-sensing region (or photo-sensing region) which may be a dopedregion having N-type and/or P-type dopants formed in the semiconductorsubstrate 210 by a method such as diffusion or ion implantation. Thelight-sensing region may have a doping concentration ranging betweenabout 10¹⁴ and 10²¹ atoms/cm³ in one example. The sensor elements mayinclude photodiodes, complimentary metal-oxide-semiconductor (CMOS)image sensors, charged coupling device (CCD) sensors, active sensor,passive sensor, and/or other sensors diffused or otherwise formed in thesubstrate 210. As such, the sensor elements may comprise conventionaland/or future-developed image sensing devices. The sensor elements mayinclude a plurality of pixels disposed in a sensor array or other properconfiguration. The plurality of sensor pixels may be designed havingvarious sensor types. For example, one group of sensor pixels are CMOSimage sensors and another group of sensor pixels are passive sensors.Moreover, the sensor elements may include color image sensors and/ormonochromatic image sensors. In one aspect of the present disclosure,the sensor elements may be disposed over the frontside surface andextend into the semiconductor substrate 210. In another embodiment, thesensor elements may be disposed above the frontside surface.

Referring now to FIG. 2D, a dielectric layer 201 is formed on thebackside surface of the substrate 210, wherein the dielectric layer 201has a compressive stress to induce a tensile stress in the substrate210. In one embodiment, as the dielectric layer is formed under a load,compressive stress of the dielectric layer acts towards the center ofthe dielectric material and leads to compression of the dielectriclayer. When the compressively-stressed dielectric layer 201 is formed onthe substrate 210, a tensile stress leading to expansion is induced inthe substrate 210. In other words, high compressive stress close to thesubstrate can induce tensile stress in the substrate material,increasing the band gap of the substrate material, such as silicon, andleading to reduced leakage current or dark current. For example,compressive stress greater than about 1 Pa may act on a siliconsubstrate to induce the silicon substrate to react and form a tensilestress silicon structure, wherein the tensile stress silicon structurecan increase the energy band gap and result in lower dark current.Advantageously, tensile stress in the substrate 210 can reduce thestress impact on the substrate from subsequent processing, such as thestress impact from color filter processing and/or chip packaging.

In one embodiment, the dielectric layer 201 may have compressive stressgreater than about 1 Pa, 10 MPa, or 10 GPa. In another embodiment,dielectric layer 201 may induce tensile stress in the substrate 210greater than about 1 Pa, 10 MPa, or 10 GPa. In yet another embodiment,the dielectric layer 201 has a compressive stress between about 1 MPaand about 1 GPa, and/or dielectric layer 201 may induce a tensile stressin the substrate 210 between about 1 MPa and about 1 GPa.

In one embodiment, the compressively-stressed dielectric layer 201 isdeposited directly on substrate 210 by plasma enhanced chemical vapordeposition (PECVD) with source power between about 500 watts and about1000 watts, pressure between about 1 torr and about 5 torr, andtemperature greater than about 400 degrees Celsius. Dielectric layer 201may also be deposited by other methods and techniques, such as chemicalvapor deposition (CVD) and atomic layer deposition (ALD). In oneexample, the dielectric layer 201 is comprised of SiN, SiON, SiC, Ta₂O₅,Al₂O₃, HfO₂, ZrO₂, TiO₂, or alloys thereof. In yet another example, thedielectric layer 201 is deposited to a thickness between about 200angstroms and about 2,000 angstroms. Dielectric layer 201 may not beformed directly on substrate 210 in other embodiments, but is disposedas close as possible to the substrate so its compressive stresscharacteristic may maximally influence the substrate.

Advantageously, dielectric layer 201 may also be formed to function as abackside passivation layer for mechanical support and/or protectionagainst moisture, as an etch stop layer for subsequent processing,and/or as an antireflective coating (ARC) to maximize quantumefficiency. In one example, dielectric layer 201 is formed to have arefractive index greater than about 1.9 and an extinction coefficient ofabout 0.

Referring now to FIG. 2E, the dielectric layer 201 may be furtherprocessed by a patterned etch process 217. Process 217 may includeconventional photolithographic and etch techniques known in the art,such as the use of patterned photoresist and a dry etch.

Finally, in FIG. 2F, lenses 280 and color filters 290 may be formed onetched dielectric layer 201 for color imaging applications. Themicro-lens 280 is interposed between the sensor elements and the backsurface of the semiconductor substrate 210, or between the color filtersand the back surface, such that the backside-illuminated light can befocused on the light-sensing regions.

In the disclosed structure and the method to make the same, theilluminated light during applications may not be limited to a visuallight beam, but can be extended to other optical light such as infrared(IR) and ultraviolet (UV), and other proper radiation beams.

It is understood that additional processes may be performed to completethe fabrication of the semiconductor device. For example, theseadditional processes may include deposition of passivation layers,formation of contacts, and formation of interconnect structures (e.g.,lines and vias, metal layers, and interlayer dielectric that provideelectrical interconnection to the device including the formed metalgate). A plurality of integrated circuit devices may also be formed onthe frontside surface of substrate 210. For the sake of simplicity,these additional processes are not described herein.

Referring now to FIG. 3A, a sectional view of one embodiment of asemiconductor device 300 having a plurality of backside illuminated (orback-illuminated) sensors, sensor isolation features, and acompressively-stressed dielectric layer is illustrated according toaspects of the present disclosure. FIG. 3B illustrates a top view of oneembodiment of the semiconductor device 300. Some features in FIG. 3A arenot illustrated in FIG. 3B for simplicity and clarification. Thesemiconductor device 300 will now be described with reference to FIGS.3A and 3B. Similar elements as those described above with respect toFIGS. 1 and 2A-2F are similarly numbered and may not be fully describedalthough fully applicable in this embodiment.

The semiconductor device 300 includes a semiconductor substrate 310,which may also be considered a sensor layer. The substrate 310 includessilicon. The substrate 310 may alternatively or additionally includeother elementary semiconductor material such as germanium, and/ordiamond. The substrate 310 may also include a compound semiconductormaterial such as silicon carbide, gallium arsenic, indium arsenide,and/or indium phosphide. The substrate 310 may include an alloysemiconductor such as silicon germanium, silicon germanium carbide,gallium arsenic phosphide, and/or gallium indium phosphide. Thesubstrate 310 may include various p-type doped regions and/or n-typedoped regions. All doping may be implemented using a process such as ionimplantation or diffusion in various steps and techniques. The substrate310 may include conventional isolation features, known in the art, toseparate different devices formed in the substrate 310. The substrate310 may include other features such as an epitaxial layer, asemiconductor on insulator (SOI) structure, or combinations thereof.

The semiconductor device 300 includes sensor elements 320 (or sensorpixels) formed within the semiconductor substrate 310. In oneembodiment, the sensor elements 320 may each include a light-sensingregion (or photo-sensing region) which may be a doped region havingN-type and/or P-type dopants formed in the semiconductor substrate 310by a method such as diffusion or ion implantation. The light-sensingregion may have a doping concentration ranging between about 10¹⁴ and10²¹ atoms/cm³ in one example. The sensor elements 320 may includephotodiodes, complimentary metal-oxide-semiconductor (CMOS) imagesensors, charged coupling device (CCD) sensors, active sensor, passivesensor, and/or other sensors diffused or otherwise formed in thesubstrate 310. As such, the sensor elements 320 may compriseconventional and/or future-developed image sensing devices. The sensorelements 320 may include a plurality of pixels disposed in a sensorarray or other proper configuration. The plurality of sensor pixels maybe designed having various sensor types. For example, one group ofsensor pixels are CMOS image sensors and another group of sensor pixelsare passive sensors. Moreover, the sensor elements 320 may include colorimage sensors and/or monochromatic image sensors. In one example, thesemiconductor device 300 is designed to receive light (or radiation) 350directed towards the back surface of the semiconductor substrate 310during applications, eliminating obstruction of the optical paths byother objects such as gate features and metal lines, and maximizing theexposure of the light-sensing region to the illuminated light. Thesubstrate 310 may be thinned such that the light directed through theback surface thereof may effectively reach the sensor elements 320.

The semiconductor device 300 further includes a multilayer interconnect(MLI) 330 coupled to the sensor elements 320, such that the sensorelements 320 are operable to properly respond to illuminated light(imaging radiation). The semiconductor device 300 further includes aninterlayer dielectric (inter-level dielectric or ILD) 340 to isolate theMLI 330 disposed therein. Such structures are similar to the structuresdescribed above with respect to FIGS. 2A-2F and are not describedfurther to avoid repetition but are fully applicable in this embodiment.

The semiconductor device 300 further includes sensor isolation features360 formed in the substrate 310 and configured to lower or substantiallyeliminate optical and/or electronic crosstalk between sensor elements byisolating light (radiation, or signal) targeted for each sensor elementand minimizing the light spreading into other sensor elements. Thus,optical and/or electronic crosstalk among various sensor pixels in whichan electric signal may be transformed from an imaging radiation signalis reduced or substantially eliminated, and the quantum efficiency (QE)factor for the device is improved.

The sensor isolation feature 360 may be disposed vertically between theILD 340 and the backside surface of the substrate 310 (FIG. 3A). Thesensor isolation feature 360 may also be disposed horizontally betweentwo adjacent sensor elements 320 in a top view toward the backside ofthe substrate (FIG. 3B). In one embodiment, as illustrated in FIG. 3B,the sensor isolation feature 360 is configured as multiple squares eachincluding one sensor element 320. The sensor isolation feature 360 maybe thin and deep in dimensions such as to occupy less area of thesubstrate 310 and provide efficient isolation functions. As illustratedin FIGS. 3A and 3B, the sensor isolation feature 360 may be disposedbetween two neighboring sensor elements and have a width ranging betweenabout 0.1 micron and about 0.5 micron in one example. The sensorisolation feature 360 may be vertically extended substantially betweenthe backside surface and the ILD 340. In one embodiment, the sensorisolation feature 360 may run substantially along 100% of the thicknessof the semiconductor substrate 310. In other embodiments, the sensorisolation feature 360 may be vertically extended along less than 100% ofthe thickness of the semiconductor substrate 310. In one example, thesemiconductor substrate 310 may have a thickness ranging between about1.0 micron and about 5.0 micron for illumination and imaging efficiency,and the sensor isolation feature 360 may also have a thickness rangingbetween about 1.0 micron and about 5.0 micron but is not limited to sucha range. The sensor isolation feature 360 may further include aplurality of portions, connected or not connected, disposed in aconfiguration to substantially eliminate crosstalk between two adjacentsensor elements. For example, the sensor isolation feature 360 may bedesigned to include a fence structure having a plurality of postsinterposed between neighboring sensor elements and disposed around eachsensor element.

The semiconductor device 300 may further include a passivation layer 370disposed over the MLI 330 and ILD 340.

The device 300 further includes a dielectric layer 301 as describedabove and is formed on substrate 310. The dielectric layer 301 has acompressive stress to induce a tensile stress in the substrate 310 andincludes the features and advantages described above and may be formedas described above. Dielectric layer 301 may further function as apassivation layer, an etch stop layer, and/or an antireflective coating(ARC) layer attached to the backside surface of the semiconductorsubstrate 310 to provide mechanical support and protection thereof(e.g., from moisture) and to optically allow the backside-illuminatedlight to pass therethrough for high quantum efficiency.

The device 300 may also include color filters interposed between thesensor elements 320 and the back surface of the semiconductor substrate310 for color imaging applications. The device 300 may include aplurality of micro-lens interposed between the sensor elements 320 andthe back surface of the semiconductor substrate 310, or between thecolor filters and the back surface if the color filters are implemented,such that the backside-illuminated light can be focused on thelight-sensing regions. The sensor isolation feature 360 may be formed byvarious processes compatible and integral to conventional processingtechnologies.

In the disclosed structure and the method to make the same, theilluminated light during applications may not be limited to a visuallight beam, but can be extended to other optical light such as infrared(IR) and ultraviolet (UV), and other proper radiation beams.Accordingly, the sensor isolation feature 360 may be properly chosen anddesigned to effectively reflect and/or absorb the correspondingradiation beam.

It is understood that additional processes may be performed to completethe fabrication of the semiconductor device. For example, theseadditional processes may include deposition of passivation layers,formation of contacts, and formation of interconnect structures (e.g.,lines and vias, metal layers, and interlayer dielectric that provideelectrical interconnection to the device including the formed metalgate). For the sake of simplicity, these additional processes are notdescribed herein.

The present disclosure provides for many different embodiments. One ofthe broader forms of the present disclosure involves a method offabricating a semiconductor device. The method includes providing asubstrate having a frontside surface and a backside surface, and forminga plurality of sensor elements in the substrate, each of the pluralityof sensor elements configured to receive light directed towards thebackside surface. The method further includes forming a dielectric layeron the backside surface of the substrate, wherein the dielectric layerhas a compressive stress to induce a tensile stress in the substrate.

Another of the broader forms of the present disclosure involves abackside illuminated semiconductor device. The semiconductor deviceincludes a substrate having a frontside surface and a backside surface,and a plurality of sensor elements in the substrate, each of theplurality of sensor elements configured to receive light directedtowards the backside surface. The device further includes a dielectriclayer disposed on the backside surface of the substrate, wherein thedielectric layer has a compressive stress greater than about 1 Pa forinducing a tensile stress in the substrate.

Advantageously, the present disclosure provides for an improved andcontrollable process sequence to achieve robust BSI sensor devices withreduced leakage current or dark current.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the detailed description thatfollows. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method of fabricating a semiconductor device, the methodcomprising: providing a substrate having a frontside surface and abackside surface; forming a plurality of sensor elements in thesubstrate, each of the plurality of sensor elements configured toreceive light directed towards the backside surface; and forming adielectric layer on the backside surface of the substrate, wherein thedielectric layer is formed to have a compressive stress.
 2. The methodof claim 1, wherein the dielectric layer is formed to have a compressivestress greater than 1 Pa, 10 MPa, or 10 GPa.
 3. The method of claim 1,wherein the dielectric layer is formed to have a compressive stressbetween about 1 MPa and about 1 GPa.
 4. The method of claim 1, whereinthe dielectric layer is formed to be comprised of SiN, SiON, SiC, Ta₂O₅,Al₂O₃, HfO₂, ZrO₂, TiO₂, or alloys thereof.
 5. The method of claim 1,wherein the dielectric layer is deposited by plasma enhanced chemicalvapor deposition (PECVD) with source power between about 500 watts andabout 1000 watts, pressure between about 1 torr and about 5 torr, andtemperature greater than about 400 degrees Celsius.
 6. The method ofclaim 1, wherein the dielectric layer is deposited by plasma enhancedchemical vapor deposition (PECVD), chemical vapor deposition (CVD), oratomic layer deposition (ALD).
 7. The method of claim 1, wherein thedielectric layer is deposited to a thickness between about 200 angstromsand about 2,000 angstroms.
 8. The method of claim 1, wherein thedielectric layer is formed to have a refractive index greater than about1.9 and an extinction coefficient of about
 0. 9. The method of claim 1,wherein each of the sensor elements is formed as a photodetectorselected from the group consisting of a complementarymetal-oxide-semiconductor (CMOS) image sensor, a charge-coupled devicesensor, an active pixel sensor, a passive pixel sensor, and combinationsthereof.
 10. The method of claim 1, further comprising etching thedielectric layer and then forming a plurality of color filters on thedielectric layer.
 11. The method of claim 1, further comprising:polishing the backside surface to thin the substrate; implanting ionsinto the substrate through the backside surface; and annealing theimplanted ions.
 12. A method of fabricating a semiconductor device, themethod comprising: providing a substrate having a frontside surface anda backside surface; forming a plurality of sensor elements in thesubstrate, each of the plurality of sensor elements configured toreceive light directed towards the backside surface; and forming adielectric layer on the backside surface of the substrate, wherein thedielectric layer is formed to have a compressive stress greater thanabout 1 Pa.
 13. The method of claim 12, wherein the dielectric layer isformed to have a compressive stress between about 1 MPa and about 1 GPa.14. The method of claim 12, wherein the dielectric layer is formed to becomprised of SiN, SiON, SiC, Ta₂O₅, Al₂O₃, HfO₂, ZrO₂, TiO₂, or alloysthereof.
 15. The method of claim 12, wherein the dielectric layer isdeposited by plasma enhanced chemical vapor deposition (PECVD) withsource power between about 500 watts and about 1000 watts, pressurebetween about 1 torr and about 5 torr, and temperature greater thanabout 400 degrees Celsius.
 16. The method of claim 12, wherein thedielectric layer is deposited by plasma enhanced chemical vapordeposition (PECVD), chemical vapor deposition (CVD), or atomic layerdeposition (ALD).
 17. The method of claim 12, wherein the dielectriclayer is deposited to a thickness between about 200 angstroms and about2,000 angstroms.
 18. The method of claim 12, wherein the dielectriclayer is formed to have a refractive index greater than about 1.9 and anextinction coefficient of about
 0. 19. The method of claim 12, whereineach of the sensor elements is formed as a photodetector selected fromthe group consisting of a complementary metal-oxide-semiconductor (CMOS)image sensor, a charge-coupled device sensor, an active pixel sensor, apassive pixel sensor, and combinations thereof.
 20. The method of claim12, further comprising: etching the dielectric layer; forming aplurality of color filters on the dielectric layer; polishing thebackside surface to thin the substrate; implanting ions into thesubstrate through the backside surface; and annealing the implantedions.